Patterning layers stacks for electronic devices
AssigneeFlexenable Limited
InventorShane Norval
Life of this patent
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Abstract
There is provided a method of patterning a stack of layers defining one or more electronic device elements, comprising: creating a first thickness profile in an uppermost portion of the stack of layers by laser ablation; and etching the stack of layers to translate the first thickness profile into a second thickness profile at a lower level; wherein the etching reduces the thickness of said uppermost portion of the stack and one or more lower layers of the stack under said uppermost portion.
Claims17
A method of patterning a stack of layers defining one or more electronic device elements, comprising:
- creating a first thickness profile in an uppermost portion of the stack of layers by laser ablation;
- and
- etching the stack of layers to translate the first thickness profile into a second thickness profile at a lower level of the stack;
- wherein the etching reduces the thickness of said uppermost portion of the stack and one or more lower layers of the stack under said uppermost portion;
- wherein creating said first thickness profile comprises stopping the laser ablation midway through a first layer of the uppermost portion;
- wherein said etching comprises etching one or more layers below said first layer, and
- wherein said laser ablation removes an upper portion of the stack in selected regions;
- wherein said etching comprises etching the stack in said selected regions and outside the selected regions to leave an etched surface in said selected regions and outside said selected regions;
- and
- wherein the method further comprises depositing material over the etched surface in said selected regions and outside said selected regions.
A method of patterning a stack of layers defining one or more electronic device elements, comprising:
- creating a first thickness profile in an uppermost portion of the stack of layers by laser ablation;
- and
- etching the stack of layers to translate the first thickness profile into a second thickness profile at a lower level of the stack;
- wherein the etching reduces the thickness of said uppermost portion of the stack and one or more lower layers of the stack under said uppermost portion;
- wherein creating said first thickness profile comprises removing an upper portion of a first layer by laser ablation and stopping said laser ablation short of the bottom of said first layer;
- wherein said etching comprises etching one or more layers below said first layer, and
- wherein said laser ablation removes an upper portion of the stack in selected regions;
- wherein said etching comprises etching the stack in said selected regions and outside the selected regions to leave an etched surface in said selected regions and outside said selected regions;
- and
- wherein the method further comprises depositing material over the etched surface in said selected regions and outside said selected regions.
A method of patterning a stack of layers defining one or more electronic device elements, comprising:
- creating a first thickness profile in an uppermost portion of the stack of layers by laser ablation;
- and etching the stack of layers to translate the first thickness profile into a second thickness profile at a lower level of the stack;
- wherein the etching reduces the thickness of said uppermost portion of the stack and one or more lower layers of the stack under said uppermost portion;
- wherein said first thickness profile extends partially down through a dielectric layer of the stack directly above a semiconductor layer of the stack;
- wherein said etching comprises etching said semiconductor layer, and
- wherein said laser ablation removes an upper portion of the stack in selected regions;
- wherein said etching comprises etching the stack in said selected regions and outside the selected regions to leave an etched surface in said selected regions and outside said selected regions;
- and
- wherein the method further comprises depositing material over the etched surface in said selected regions and outside said selected regions.
Dependencies are inferred from the claim text.