Semiconductor device, systems and methods of manufacture
AssigneeSamsung Electronics Co., Ltd.
InventorsTaekyung Kim, Kwang Soo Seol, Seong Soon Cho, Sunghoi Hur, Jintae Kang
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Abstract
A semiconductor memory device includes a stack of word lines and insulating patterns. Cell pillars extend vertically through the stack of word lines and insulating patterns with memory cells being formed at the junctions of the cell pillars and the word lines. A ratio of the thickness of the word lines to the thickness of immediately neighboring insulating patterns is different at different locations along one or more of the cell pillars. Related methods of manufacturing and systems are also disclosed.
Claims20
A semiconductor device comprising:
- a substrate;
- a stack comprising a plurality of electrodes and a plurality of insulating layers vertically and alternately stacked on the substrate, the stack including a first portion, a second portion, and a third portion which are sequentially stacked in a vertical direction with respect to the substrate, the plurality of insulating layers including a first insulating layer, a second insulating layer and a third insulating layer;
- a plurality of cell pillars vertically extending through the stack, each of the cell pillars continuously extending through the stack from the uppermost one of the electrodes to the lowermost one of the electrodes
- wherein the first portion of the stack includes the first insulating layer, the first insulating layer having a first thickness and disposed between two immediately adjacent ones of the electrodes of the first portion of the stack,
- wherein the second portion of the stack includes the second insulating layer, the second insulating layer having a second thickness different from the first thickness and disposed between two immediately adjacent ones of the electrodes of the second portion of the stack, and
- wherein the third portion of the stack includes the third insulating layer, the third insulating layer having a third thickness different from the second thickness and disposed between two immediately adjacent ones of the electrodes of the third portion of the stack.
A semiconductor device comprising:
- a substrate;
- a stack comprising a plurality of electrodes and insulating layers vertically and alternately stacked on the substrate, the stack including a first portion, a second portion, and a third portion which are sequentially stacked in a vertical direction with respect to the substrate;
- a plurality of cell pillars vertically extending through the stack,
- wherein the first portion of the stack includes a first electrode of the electrodes and a first insulating layer of the insulating layers, the first insulating layer being immediately adjacent to the first electrode,
- wherein the second portion of the stack includes a second electrode of the electrodes and a second insulating layer of the insulating layers, the second insulating layer being immediately adjacent to the second electrode,
- wherein the third portion of the stack includes a third electrode of the electrodes and a third insulating layer of the insulating layers, the third insulating layer being immediately adjacent to the third electrode,
- wherein a ratio of a thickness of the first electrode to a thickness of the first insulating layer is different than a ratio of a thickness of the second electrode to a thickness of the second insulating layer, and
- wherein a ratio of a thickness of the third electrode to a thickness of the third insulating layer is different than the ratio of the thickness of the second electrode to the thickness of the second insulating layer.
Dependencies are inferred from the claim text.