Semiconductor device

A semiconductor device comprising:

• a first stacked body disposed above a substrate, the first stacked body including a first electrode layer and a second electrode layer provided between the first electrode layer and the substrate;
• a first columnar portion extending in a first direction in the first stacked body;
• a second stacked body disposed on the first stacked body, the second stacked body including a third electrode layer and a fourth electrode layer provided between the third electrode layer and the first stacked body;
• a second columnar portion extending in the first direction in the second stacked body;
• a first charge storage portion provided between the first electrode layer and the first columnar portion;
• and
• a second charge storage portion provided between the fourth electrode layer and the second columnar portion,
• a first thickness in a second direction intersecting the first direction of the first charge storage portion between the first electrode layer and the first columnar portion being thicker than a second thickness in the second direction of the second charge storage portion between the fourth electrode layer and the second columnar portion,
• a diameter of a first portion of the first columnar portion being larger than a diameter of a second portion of the second columnar portion, the first portion being surrounded by the first charge storage portion, and the second portion being surrounded by the second charge storage portion.