Semiconductor device including a gate electrode and a conductive structure
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-Ho Do, Seungyoung Lee, Jonghoon Jung, Jinyoung Lim, Giyoung Yang, Sanghoon Baek, Taejoong Song
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Abstract
A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.
Claims15
A semiconductor device, comprising:
- a gate electrode disposed on a substrate;
- a first contact disposed on the gate electrode;
- a conductive structure disposed on the substrate and spaced apart from the gate electrode;
- a second contact disposed on the conductive structure;
- and
- a third contact directly disposed on the first and second contacts and connecting the first and second contacts to each other,
- wherein a first portion of the first contact is disposed in a first insulating layer, and a top surface of the conductive structure is coplanar with a top surface of the first insulating layer,
- wherein a second portion of the first contact is disposed in a second insulating layer, and the second and third contacts are disposed in the second insulating layer,
- wherein a gap is formed between the second portion of the first contact and the second contact, the gap being filled with the second insulating layer, and the third contact extends across the gap to connect with the second portion of the first contact and the second contact.
A semiconductor device, comprising:
- a gate electrode disposed on a substrate;
- a first contact disposed on the gate electrode;
- a conductive structure disposed on the substrate and spaced apart from the gate electrode, wherein the gate electrode, the conductive structure and a first portion of the first contact are disposed in a first insulating layer;
- a second contact disposed on the conductive structure;
- a third contact directly disposed on the first and second contacts and connecting the first and second contacts to each other, wherein the second contact, the third contact and a second portion of the first contact are disposed in a second insulating layer;
- and
- a third insulating layer disposed on the second insulating layer,
- wherein a gap is formed between the second portion of the first contact and the second contact, the gap being filled with the second insulating layer.
A semiconductor device, comprising:
- a gate electrode disposed on a substrate, a longitudinal direction of the gate electrode being parallel to a first direction;
- a first contact disposed on the gate electrode;
- a lower conductive structure disposed on the substrate and spaced apart from the gate electrode;
- a second contact disposed on the lower conductive structure, the second contact being spaced apart from the first contact in a second direction intersecting the first direction in a first insulating layer;
- a third contact directly disposed on the first and second contacts and extending in the second direction, thereby connecting the first and second contacts to each other, the first, second and third contacts constituting an upper conductive structure, and the first, second and third contacts are disposed in the first insulating layer;
- and
- a barrier pattern covering a bottom surface and side surfaces of the upper conductive structure, except a top surface of the upper conductive structure,
- wherein a width of the third contact in the first direction is greater than a width of the first contact in the first direction.
Dependencies are inferred from the claim text.