Semiconductor device having thyristor and metal-oxide semiconductor transistor
AssigneesUnited Microelectronics Corp., Fujian Jinhua Integrated Circuit Co., Ltd.
InventorsYukihiro Nagai, Le-Tien Jung
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Abstract
A semiconductor device includes a substrate having a cell region and a peripheral region, a thyristor on the cell region, a MOS transistor on the peripheral region, and a first silicide layer on the substrate adjacent to the thyristor on the cell region. Preferably, the thyristor includes: a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer on the cell region, vertical dielectric patterns in the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer, and first contact plugs on the fourth semiconductor layer.
Claims11
A semiconductor device, comprising:
- a substrate having a cell region and a peripheral region,
- a thyristor on the cell region, wherein
- the thyristor comprises a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a fourth semiconductor layer on the cell region;
- a Metal Oxide Semiconductor (MOS) transistor on the peripheral region;
- a first silicide layer on the substrate adjacent to the thyristor on the cell region;
- and
- wherein a first step is formed in the cell region from an upper surface of the fourth semiconductor layer down to an upper surface of the first semiconductor layer,
- a second step is formed in the cell region from the upper surface of the first semiconductor layer down to an upper surface of the substrate,
- a portion of the second step extends in a first direction between the cell region and the peripheral region.
Dependencies are inferred from the claim text.