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US 10,541,239 B2Granted
Semiconductor device and method of forming the semiconductor device
AssigneeInternational Business Machines Corporation
InventorsRobin Hsin-Ku Chao, Hemanth Jagannathan, ChoongHyun Lee, Chun Wing Yeung, Jingyun Zhang
Life of this patent
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Abstract
A semiconductor device includes a first SiGe fin formed on a substrate and including a first amount of Ge, and a second SiGe fin formed on a substrate and including a central portion including a second amount of Ge, and a surface portion comprising a third amount of Ge which is greater than the second amount.
Claims20
A semiconductor device comprising:
- a first diffusion region having a first conductivity type formed on a substrate and including a first projecting portion;
- a first SiGe fin formed on the first projecting portion of the first diffusion region and comprising a first amount of Ge;
- a second diffusion region having a second conductivity type formed on the substrate and including a second projecting portion;
- a second SiGe fin formed on the second projecting portion of the second diffusion region and comprising:
- a central portion comprising a second amount of Ge which is substantially equal to the first amount of Ge;
- and
- a surface portion comprising a third amount of Ge which is at least 20% greater than the second amount,
- wherein a total width of the central portion and the surface portion is substantially equal to a width of the second projecting portion of the second diffusion region.
5 more elements
A semiconductor device comprising:
- a first diffusion region having a first conductivity type formed on a substrate and including a first projecting portion;
- a first SiGe fin formed on the first projecting portion of the first diffusion region and comprising a first amount of Ge;
- a second diffusion region having a second conductivity type formed on the substrate and including a second projecting portion;
- a second SiGe fin formed on the second projecting portion of the second diffusion region, a height of the second SiGe fin in a vertical direction being substantially equal to a height of the first SiGe fin in the vertical direction, and a width of the second SiGe fin in a horizontal direction being substantially equal to a width of the first SiGe fin in the horizontal direction, and the second SiGe fin comprising:
- a central portion comprising a second amount of Ge which is substantially equal to the first amount of Ge and which is no more than 20% Ge;
- and
- a surface portion comprising a third amount of Ge which is at least 20% greater than the second amount,
- wherein a total width of the central portion and the surface portion is substantially equal to a width of the second projecting portion of the second diffusion region.
5 more elements
A semiconductor device comprising:
- a first diffusion region having a first conductivity type formed on a substrate and including a first projecting portion;
- a first SiGe fin formed on the first projecting portion of the first diffusion region and comprising a first amount of Ge;
- and
- a second diffusion region having a second conductivity type formed on the substrate and including a second projecting portion;
- a second SiGe fin formed on the second projecting portion of the second diffusion region and comprising:
- a central portion comprising a second amount of Ge which is substantially equal to the first amount of Ge;
- and
- a surface portion comprising a third amount of Ge which is greater than the second amount,
- wherein a total width of the central portion and the surface portion is substantially equal to a width of the second projecting portion of the second diffusion region.
6 more elements
Dependencies are inferred from the claim text.