Electrostatic discharge devices with reduced capacitance
AssigneeGlobalfoundries Inc.
InventorsSouvick Mitra, Mickey Yu, Alain F. Loiseau, You Li, Robert J. Gauthier, Jr., Tsung-Che Tsai
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to electrostatic discharge structures with reduced capacitance and methods of manufacture. The structure includes: a plurality of fin structures provided in at least one N+ type region and at least one P+ region; and a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region.
Claims14
An electrostatic discharge structure, comprising:
- a plurality of fin structures provided in at least one N+ type region and at least one P+ region;
- and
- a plurality of gate structures disposed over the plurality of fin structures and within the at least one N+ type region and one P+ region, the plurality of gate structures being separated in a lengthwise direction between the at least one N+ type region and the least one P+ region,
- wherein the at least one N+ type region and at least one P+ region comprise N+ type epitaxial material and P+ type epitaxial material deposited over the plurality of gate structures in the at least one N+ type region and in the at least one P+ region respectively;
- wherein the plurality of gate structures disposed over the plurality of fin structures comprise a transverse cut which separates them along the lengthwise direction, the transverse cut being located between the N+ type epitaxial material and P+ type epitaxial material and over the shallow trench isolation features, with the ends of the plurality of gate structures being in alignment in each respective region.
An electrostatic discharge structure, comprising:
- a first region of a first dopant type extending over a plurality of fin structures;
- a second region of a second dopant extending over the plurality of fin structures and adjacent to the first region;
- a third region of the first dopant type extending over the plurality of fin structures and adjacent to the second region;
- a first plurality of gate structures in the first region;
- a second plurality of gate structures in the second region;
- and
- a third plurality of gate structures in the third region,
- wherein the first plurality of gate structures, the second plurality of gate structures and the third plurality of gate structures are separated in a lengthwise direction, and
- wherein the first dopant type is a first doped epitaxial material deposited over the plurality of fin structures and the first plurality of gate structures in the first region and the third plurality of gate structures in the third region, and
- wherein the second dopant type is a second doped epitaxial material deposited over the plurality of fin structures and the second plurality of gate structures in the second region;
- wherein the first, second and third plurality of gate structures are each cut along the lengthwise direction so as to separate from one another each of the first, second and third plurality of gate structures, the cuts are located (i) between the first doped epitaxial material deposited over the first plurality of gate structures in the first region and the second doped epitaxial material deposited over the second plurality of gate structures in the second region and (ii) between the first doped epitaxial material deposited over the third plurality of gate structures in the third region and the second doped epitaxial material deposited over the second plurality of gate structures in the second region, and the cuts are further provided over shallow trench isolation regions which are devoid of the first doped epitaxial material and the second doped epitaxial material.
Dependencies are inferred from the claim text.