Semiconductor device and method for manufacturing same

A semiconductor device comprising:

• a first laminated body including a first substrate, and further including sequentially a first element, a first wiring layer, and a first connection layer that includes a first junction electrode, on a main surface of the first substrate;
• and
• a second laminated body including a second substrate, and further including sequentially a second element, a second wiring layer, and a second connection layer that includes a second junction electrode, on a main surface of the second substrate, wherein:
• the first laminated body and the second laminated body are bonded by directly bonding the first junction electrode and the second junction electrode with the first and second junction electrodes facing each other,
• a space region, whose periphery is completely surrounded by a first region and a second region, is formed inside away from an outer periphery of a junction interface between the first connection layer and the second connection layer in plan view, the first region extending across a connecting part between a first insulating film included in the first connection layer and a first conductive film included in the first connection layer and yet formed of a same material as the first junction electrode, the second region extending across a connecting part between a second insulating film included in the second connection layer and a second conductive film included in the second connection layer and yet formed of a same material as the second junction electrode,
• the first conductive film does not contact with the first junction electrode and the second conductive film does not contact with the second junction electrode, and
• a first surface of the first conductive film is exposed to the space region, the first surface being opposed to the second conductive film.