Packages formed using RDL-last process
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Fa Chen, Chen-Hua Yu
Life of this patent
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Abstract
A method includes bonding a first device die and a second device die to a substrate, and filling a gap between the first device die and the second device die with a gap-filling material. A top portion of the gap-filling material covers the first device die and the second device die. Vias are formed to penetrate through the top portion of the gap-filling material. The vias are electrically coupled to the first device die and the second device die. The method further includes forming redistribution lines over the gap-filling material using damascene processes, and forming electrical connectors over and electrically coupling to the redistribution lines.
Claims20
A method comprising:
- forming a first plurality of bond pads extending into a blank substrate;
- forming a second plurality of bond pads extending into semiconductor substrates of a first device die and a second device die;
- bonding the first device die and the second device die to the blank substrate, wherein the bonding comprises bonding the first plurality of bond pads to the second plurality of bond pads through metal-to-metal direct bonding;
- filling a gap between the first device die and the second device die with a gap-filling material, wherein a top portion of the gap-filling material covers the first device die and the second device die;
- after the gap is filled, forming vias penetrating through the top portion of the gap-filling material, wherein the vias are electrically coupled to the first device die and the second device die;
- forming redistribution lines over the gap-filling material using damascene processes;
- and
- forming electrical connectors over and electrically coupling to the redistribution lines.
A method comprising:
- attaching a first device die and a second device die to a heat spreader;
- filling a gap between the first device die and the second device die with a dielectric material, wherein a top portion of the dielectric material covers the first device die and the second device die;
- forming vias penetrating through the top portion of the dielectric material, wherein the vias are electrically coupled to the first device die and the second device die;
- forming a plurality of dielectric layers over the dielectric material;
- forming redistribution lines in the plurality of dielectric layers using dual damascene processes;
- forming electrical connectors over and electrically coupling to the redistribution lines;
- and
- performing a die saw to cut through the heat spreader, the dielectric material, and the plurality of dielectric layers to form a plurality of packages.
A method comprising:
- bonding a first device die and a second device die to a blank substrate;
- forming an oxide layer to fill a gap between the first device die and the second device die;
- forming redistribution lines over the oxide layer, wherein the first device die and the second device die are electrically intercoupled through the redistribution lines;
- forming electrical connectors over and electrically coupling to the redistribution lines;
- and
- sawing through the blank substrate and the oxide layer to form a plurality of packages, wherein the first device die and the second device die are in one of the plurality of packages.
Dependencies are inferred from the claim text.