System on integrated chips and methods of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSung-Feng Yeh, Chen-Hua Yu, Ming-Fa Chen
Life of this patent
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Abstract
An embodiment method for forming a semiconductor package includes attaching a first die to a first carrier, depositing a first isolation material around the first die, and after depositing the first isolation material, bonding a second die to the first die. Bonding the second die to the first die includes forming a dielectric-to-dielectric bond. The method further includes removing the first carrier and forming fan-out redistribution layers (RDLs) on an opposing side of the first die as the second die. The fan-out RDLs are electrically connected to the first die and the second die.
Claims20
A package comprising:
- a first semiconductor die;
- a second semiconductor die bonded to the first semiconductor die, wherein a first dielectric layer of the first semiconductor die is directly bonded to a second dielectric layer of the second semiconductor die;
- a third semiconductor die bonded to the first semiconductor die, wherein the first dielectric layer of the first semiconductor die is directly bonded to a third dielectric layer of the third semiconductor die;
- a first isolation material disposed around the second semiconductor die and the third semiconductor die, wherein the second semiconductor die is physically separated from the third semiconductor die by the first isolation material;
- and
- a redistribution structure electrically connected to the first semiconductor die, the second semiconductor die, and the third semiconductor die.
A semiconductor package comprising:
- a first semiconductor die;
- a second semiconductor die, wherein a first dielectric layer of the first semiconductor die is directly bonded to a second dielectric layer of the second semiconductor die, and wherein a first contact pad the first semiconductor die is directly bonded to a second contact pad of the second semiconductor die;
- an isolation material disposed around the first semiconductor die and the second semiconductor die;
- a redistribution structure on an opposing side of the first semiconductor die as the second semiconductor die, wherein the redistribution structure is electrically connected to the first semiconductor die;
- and
- a first conductive via electrically connecting the redistribution structure to the second semiconductor die, wherein the first conductive via is laterally separated from the first semiconductor die.
A method comprising:
- encapsulating a first semiconductor die and a second semiconductor die in a first isolation material;
- bonding a third semiconductor die to the first semiconductor die and the second semiconductor die by directly bonding a first dielectric layer of the first semiconductor die to a third dielectric layer of the third semiconductor die and by directly bonding a second dielectric layer of the second semiconductor die to a third dielectric layer of the third semiconductor die;
- and
- forming a redistribution structure electrically connected to the first semiconductor die, the second semiconductor die, and the third semiconductor die.
Dependencies are inferred from the claim text.