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US 10,541,220 B1Granted
Printed repassivation for wafer chip scale packaging
AssigneeTexas Instruments Incorporated
InventorsDaiki Komatsu, Makoto Shibuya, Yi Yan, Hau Nguyen, Luu Thanh Nguyen, Anindya Poddar
Life of this patent
Estimating the term…
Abstract
Described examples provide integrated circuits and methods, including forming a conductive seed layer at least partially above a conductive feature of a wafer, forming a conductive structure on at least a portion of the conductive seed layer, performing a printing process that forms a polymer material on a side of the wafer proximate a side of the conductive structure, curing the deposited polymer material, and attaching a solder ball structure to a side of the conductive structure.
Claims26
A method, comprising:
- forming a conductive seed layer at least partially above a conductive feature of a wafer;
- forming a conductive structure on at least a portion of the conductive seed layer;
- performing a printing process that forms a polymer material on a side of the wafer proximate a side of the conductive structure;
- curing the deposited polymer material;
- and
- attaching a solder ball structure to a side of the conductive structure.
3 more elements
A device, comprising:
- an electronic component disposed on or in a semiconductor substrate;
- a metallization structure disposed over the semiconductor substrate, including a conductive feature;
- a conductive contact structure electrically coupled with the conductive feature, the conductive contact structure extending outward from a side of the metallization structure;
- a printed polymer material disposed on the side of the metallization structure proximate a side of the conductive contact structure;
- and
- a solder ball structure connected to the conductive structure.
3 more elements
An integrated circuit (IC), comprising:
- a die, including:
- a semiconductor substrate, including an electronic component, and
- a metallization structure disposed over the semiconductor substrate, the metallization structure including a conductive feature;
- a conductive contact structure electrically coupled with the conductive feature, the conductive contact structure extending outward from a side of the metallization structure;
- a printed polymer material disposed on the side of the metallization structure proximate a side of the conductive contact structure;
- and
- a package structure that encloses the die and provides electrical connection to the conductive contact structure.
4 more elements
An integrated circuit (IC), comprising:
- a die, including:
- a semiconductor substrate, including an electronic component, and
- a metallization structure disposed over the semiconductor substrate, the metallization structure including a conductive feature;
- a conductive contact structure electrically coupled with the conductive feature, the conductive contact structure extending outward from a side of the metallization structure;
- a printed polymer material disposed on the side of the metallization structure proximate a side of the conductive contact structure;
- and
- a package structure that encloses the die and provides electrical connection to the conductive contact structure, wherein the package structure includes a substrate, having a first side with a conductive pad soldered to the conductive contact structure, a second side with a conductive pad electrically connected to the conductive pad of the first side, and a solder ball soldered to the conductive pad of the second side.
4 more elements
An integrated circuit (IC), comprising:
- a die, including:
- a semiconductor substrate, including an electronic component, and
- a metallization structure disposed over the semiconductor substrate, the metallization structure including a conductive feature;
- a conductive contact structure electrically coupled with the conductive feature, the conductive contact structure extending outward from a side of the metallization structure;
- a printed polymer material disposed on the side of the metallization structure proximate a side of the conductive contact structure;
- and
- a package structure that encloses the die and provides electrical connection to the conductive contact structure, wherein the package structure includes;
- a conductive metal lead frame structure, including a lead soldered to the conductive contact structure;
- and
- a ceramic structure or molded material that encapsulates the die, the conductive contact structure, the printed polymer material, and a portion of the conductive metal lead frame structure.
7 more elements
A method for fabricating an integrated circuit (IC), the method comprising:
- forming a conductive seed layer at least partially above a conductive feature of a wafer;
- forming a conductive structure on at least a portion of the conductive seed layer;
- performing a printing process that forms a polymer material on a side of the wafer proximate a side of the conductive structure;
- curing the deposited polymer material;
- attaching a solder ball structure to a side of the conductive structure;
- separating a die from the wafer;
- and
- creating a package structure package structure that encloses the die and provides electrical connection to the conductive contact structure.
5 more elements
A method for fabricating an integrated circuit (IC), the method comprising:
- forming a conductive seed layer at least partially above a conductive feature of a wafer;
- forming a conductive structure on at least a portion of the conductive seed layer;
- performing a printing process that forms a polymer material on a side of the wafer proximate a side of the conductive structure, including performing multiple printing passes to deposit multiple layers of the polymer material proximate the side of the conductive structure;
- curing the deposited polymer material;
- attaching a solder ball structure to a side of the conductive structure;
- separating a die from the wafer;
- and
- creating a package structure package structure that encloses the die and provides electrical connection to the conductive contact structure.
5 more elements
A method for fabricating an integrated circuit (IC), the method comprising:
- forming a conductive seed layer at least partially above a conductive feature of a wafer;
- forming a conductive structure on at least a portion of the conductive seed layer;
- performing a printing process that forms a polymer material on a side of the wafer proximate a side of the conductive structure;
- heating the wafer while performing the printing process to at least partially cure the polymer material;
- attaching a solder ball structure to a side of the conductive structure;
- separating a die from the wafer;
- and
- creating a package structure that encloses the die and provides electrical connection to the conductive contact structure.
5 more elements
A method for fabricating an integrated circuit (IC), the method comprising:
- forming a conductive seed layer at least partially above a conductive feature of a wafer;
- forming a conductive structure on at least a portion of the conductive seed layer;
- performing a printing process that forms a polymer material on a side of the wafer proximate a side of the conductive structure;
- exposing the polymer material to ultraviolet light while performing the printing process to at least partially cure the polymer material;
- attaching a solder ball structure to a side of the conductive structure;
- separating a die from the wafer;
- and
- creating a package structure package structure that encloses the die and provides electrical connection to the conductive contact structure.
5 more elements
Dependencies are inferred from the claim text.