Redistribution layer structure and fabrication method therefor

A method of fabricating an integrated circuit (IC), comprising:

• depositing a conductive material over a substrate;
• patterning the conductive material to form at least two conductive lines;
• depositing an insulating material over the conductive lines;
• depositing a silicon nitride material over the insulating material configured to form a rounded shape at a top portion of the at least two conductive lines;
• and
• depositing a polymer material over the silicon nitride material and filling a trench between the at least two conductive lines.

A method of manufacturing a semiconductor device, comprising:

• depositing a first passivation layer over a substrate;
• depositing a conductive material over the first passivation layer;
• patterning the conductive material to form a redistribution layer (RDL) structure, wherein an angle between a sidewall of the RDL structure and a top surface of the first passivation layer is a first angle;
• and
• depositing a second passivation layer configured to change a shape of a top portion of the RDL structure, wherein the changing of the shape of the top portion of the RDL structure comprises increasing the angle between the sidewall of the RDL structure and the top surface of the first passivation layer to a second angle.