Interconnection structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChe-Cheng Chang, Chih-Han Lin
Life of this patent
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Abstract
An interconnection structure includes a non-insulator structure, a dielectric structure, and a conductive structure. The dielectric structure is present on the non-insulator structure. The dielectric structure has a trench opening and a via opening therein. The trench opening has a bottom surface and at least one recess in the bottom surface. The via opening is present between the trench opening and the non-insulator structure. The conductive structure is present in the trench opening and the via opening and electrically connected to the non-insulator structure. The conductive structure is at least separated from the bottom of the recess.
Claims20
An interconnection structure, comprising:
- a non-insulator structure;
- a dielectric structure present on the non-insulator structure, wherein the dielectric structure has a trench opening and a via opening therein, the trench opening has a bottom surface and at least one recess extending into the bottom surface to a position lower than a top of the via opening, and the via opening is present between the trench opening and the non-insulator structure;
- a conductive structure present in the trench opening and the via opening and electrically connected to the non-insulator structure, wherein the conductive structure is at least separated from a bottom of the recess;
- and
- a first protective layer between the conductive structure and the dielectric structure, wherein the first protective layer has a tapered top end.
An interconnection structure, comprising:
- a non-insulator structure;
- a dielectric structure present on the non-insulator structure, wherein the dielectric structure has a trench opening and a via opening therein, the via opening is present between the trench opening and the non-insulator structure, and the trench opening has a curved bottom surface;
- a conductive structure present in the trench opening and the via opening and electrically connected to the non-insulator structure;
- a first dielectric protective layer between the conductive structure and the dielectric structure;
- and
- a second dielectric protective layer between the conductive structure and the first dielectric protective layer, wherein the second dielectric protective layer has a bottom end lower than a bottom end of the first dielectric protective layer.
An interconnection structure, comprising:
- a non-insulator structure;
- a dielectric structure on the non-insulator structure, the dielectric structure having a trench opening and a via opening therein, the trench opening having a curved surface;
- a conductive structure present in the trench opening and the via opening and electrically connected to the non-insulator structure;
- a spacing feature between a bottom edge of the curved surface and the conductive structure, wherein the spacing feature comprises a gas-containing space;
- and
- a dielectric cap capping the spacing feature.
Dependencies are inferred from the claim text.