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US 10,541,203 B2Granted
Nickel-silicon fuse for FinFET structures
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Keith E. Fogel, Pouya Hashemi, Alexander Reznicek
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Abstract
Semiconductor fuses include a semiconductor fin having a metallized region between two non-metallized regions. Conductive layers are formed on the semiconductor fin above the two non-metallized regions. A dielectric layer is formed over the metallized region, between the conductive layers.
Claims10
A fuse, comprising:
- a semiconductor fin comprising a metallized region between two non-metallized regions;
- conductive layers formed on the semiconductor fin above the two non-metallized regions;
- and
- a dielectric layer formed over the metallized region, between the conductive layers.
1 more element
Dependencies are inferred from the claim text.