Elbow contact for field-effect transistor and manufacture thereof

A field-effect transistor (FET) including planar source and drain regions, the FET comprising:

• a gate;
• a doped semiconductor structure formed on top of the planar source and drain regions;
• and
• a sheath of conducting materials flanking the doped semiconductor structure,
• wherein the sheath is perpendicular to a surface of the planar source and drain regions,
• wherein the sheath is bent up, out of plane alongside the gate, to thereby increase a contact area,
• wherein more than one sheath are present per contact of the doped semiconductor structure,
• wherein the planar source and drain regions include a trench,
• wherein the trench includes an elongated pillar extending in a direction of growth through the trench,
• wherein a core of the trench is removed and replaced with a metal, and
• wherein an outside of the elongated pillar includes a metal coating.