Wafer and wafer defect analysis method
AssigneeSK Siltron Co., Ltd.
InventorJae Hyeong Lee
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Abstract
A wafer defect analysis method according to one embodiment comprises the steps of: thermally treating a wafer at different temperatures; measuring an oxygen precipitate index of the thermally treated wafer; determining a characteristic temperature at which the oxygen precipitate index is maximized; and discriminating a type of defect region of the wafer depending on the determined characteristic temperature.
Claims11
A wafer comprising defect regions having respectively different characteristic temperatures at which an oxygen precipitation index is maximized, wherein the defect regions comprise at least one of a small void region, an O-band region, a vacancy dominant defect-free region, a transient region, or an interstitial dominant defect-free region.
Dependencies are inferred from the claim text.