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US 10,541,173 B2Granted
Selective deposition method to form air gaps
AssigneeASM IP Holding B.V.
InventorChiyu Zhu
Life of this patent
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Abstract
A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.
Claims20
A method of forming an air gap for a semiconductor device through selective deposition comprising:
- providing a substrate for processing in a reaction chamber;
- forming a first surface overlying the substrate for selectively depositing a film, wherein the first surface comprises a first substantially vertical portion;
- forming a second surface, wherein the second surface comprises a second substantially vertical portion;
- and
- selectively depositing the film at least on the first substantially vertical portion of the first surface relative to the second substantially vertical portion, wherein a portion of the film at least partially defines the air gap,
- wherein the first surface comprises metal and the second surface comprises silicon and wherein the second surface does not comprise metal.
3 more elements
A method of forming an air gap for a semiconductor device through selective deposition comprising:
- providing a substrate for processing in a reaction chamber;
- forming a first surface overlying the substrate for selectively depositing a film, wherein the first surface comprises a first substantially vertical portion;
- forming a second surface, wherein the second surface comprises a second substantially vertical portion;
- and
- selectively depositing the film at least on the first substantially vertical portion of the first surface relative to the second substantially vertical portion, wherein a portion of the film at least partially defines the air gap,
- wherein the step of selectively depositing the film comprises:
- pulsing a metal halide precursor on the first substantially vertical surface;
- pulsing an oxygen precursor on the first substantially vertical surface;
- and
- repeating the pulsing steps until the film grows to a desired thickness.
7 more elements
Dependencies are inferred from the claim text.