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US 10,541,172 B2Granted
Semiconductor device with reduced contact resistance
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Sean Teehan, Alex J. Varghese
Life of this patent
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Abstract
An interconnect structure and methods of forming the interconnect structure an interconnect dielectric including at least one contact landing within the interconnect dielectric and/or underlying the interconnect dielectric. The structure and methods include roughening an exposed surface of at least one contact landing to increase the surface area of a conductive metal subsequently disposed in a contact feature and in direct contact with the roughened surface of the least one contact landing.
Claims7
An intermediate interconnect structure, comprising:
- an interconnect dielectric comprising an opening exposing at least one contact landing within the interconnect dielectric and/or an underlying the interconnect dielectric, the at least one contact landing formed of conductive material comprising a roughened upper surface defined by an oxide layer formed therein by a gas cluster ion beam process, wherein the opening is a via having a width of 10 nanometers to 80 nanometers, and wherein the roughened upper surface has a surface roughness of 1 nanometer to 10 nanometers.
Dependencies are inferred from the claim text.