Substrate processing apparatus and method of manufacturing semiconductor device
AssigneeKokusai Electric Corporation
InventorsTakashi Yahata, Naofumi Ohashi, Shun Matsui
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Abstract
There is provided a technique, including: a process chamber in which a substrate is processed; a substrate support member configured to support the substrate; an elevator configured to elevate the substrate support member; a gas supply port configured to supply a gas to the substrate; and a controller configured to control an elevating operation of the elevator so as to differentiate an interval between the gas supply port and the substrate supported by the substrate support member, when a gas is supplied from the gas supply port.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- processing a substrate by supplying a gas from a gas supply port to the substrate, which is supported by an elevatable substrate support member;
- generating plasma of the gas supplied to the substrate;
- and
- elevating the substrate support member so as to differentiate (i) an interval between the gas supply port and the substrate immediately after supplying the gas and starting the generation of the plasma from (ii) the interval between the gas supply port and the substrate supported by the substrate support member after elapse of a certain period since starting the generation of the plasma.
Dependencies are inferred from the claim text.