3D IC bump height metrology APC

A substrate metrology system, comprising:

• a substrate warpage measurement module configured to determine one or more substrate warpage parameters of a substrate by taking a plurality of separate measurements at a plurality of different positions over the substrate, wherein the substrate comprises a plurality of conductive interconnect layers within a dielectric structure over a semiconductor substrate and a conductive bump disposed over the dielectric structure and configured to be coupled to an additional substrate of a multi-dimensional chip;
• a substrate metrology module configured to measure one or more dimensions of the conductive bump;
• an advanced process control (APC) element in communication with the substrate warpage measurement module and the substrate metrology module, and configured to receive the one or more substrate warpage parameters from the substrate warpage measurement module and to determine an initial focal height of an optical component within the substrate metrology module based upon the one or more substrate warpage parameters;
• and
• a position control element configured to move the optical component within the substrate metrology module along a direction that is perpendicular to an upper surface of the semiconductor substrate to an initial position based upon the initial focal height.

A method, comprising:

• determining one or more substrate warpage parameters that describe a warpage of a substrate by taking a plurality of separate measurements at different locations of the substrate, wherein the substrate comprises a plurality of conductive interconnect layers within a dielectric structure over a semiconductor substrate and a conductive bump electrically coupled to the plurality of conductive interconnect layers;
• determining an initial focal height of an optical component within a substrate metrology module using the one or more substrate warpage parameters;
• determining a first orientation of the substrate within a substrate warpage measurement module configured to determine the one or more substrate warpage parameters;
• moving the substrate to a second orientation within the substrate metrology module based on the first orientation of the substrate within the substrate warpage measurement module;
• measuring one or more dimensions of the conductive bump using the substrate metrology module after setting the optical component within the substrate metrology module to the initial focal height;
• and
• bringing the conductive bump into contact with an additional substrate.