Thermally conductive structure for heat dissipation in semiconductor packages
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hao Tseng, Ying-Hao Kuo, Kuo-Chung Yee
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Abstract
A method of forming a semiconductor package includes providing a substrate, wherein the substrate has at least one chip attached on an upper surface of the substrate. An insulating barrier layer is deposited above the substrate, wherein the at least one chip is at least partially embedded within the insulating barrier layer. A thermally conductive layer is formed over the insulating barrier layer to at least partially encapsulate the at least one chip.
Claims20
A method of forming a semiconductor package, comprising:
- providing a wafer carrier;
- attaching a first chip and a second chip to an upper surface of the wafer carrier, an upper surface of the first chip residing at a first height as measured perpendicularly from an upper surface of the wafer carrier, and an upper surface of the second chip residing at a second height as measured perpendicularly from the upper surface of the wafer carrier, the first height being different from the second height;
- depositing a thermally conductive layer over the upper surface of the first chip and over the upper surface of the second chip;
- planarizing the thermally conductive layer to reduce a height of, but not fully remove, the thermally conductive layer over the first chip, and to fully remove the thermally conductive layer from over the second chip;
- and
- forming a molding compound over the thermally conductive layer to at least partially encapsulate the first and second chips.
A method of forming a semiconductor package, comprising:
- providing a wafer carrier;
- attaching a first chip and a second chip to an upper surface of the wafer carrier, an upper surface of the first chip residing at a first height as measured perpendicularly from an upper surface of the wafer carrier, and an upper surface of the second chip residing at a second height as measured perpendicularly from the upper surface of the wafer carrier, the first height being different from the second height;
- depositing a thermally conductive layer over the upper surface of the first chip and over the upper surface of the second chip;
- planarizing the thermally conductive layer to reduce a height of, but not fully remove, the thermally conductive layer over the first chip, and to fully remove the thermally conductive layer from over the second chip;
- forming a molding compound over the thermally conductive layer to at least partially encapsulate the first and second chips;
- forming a thermally insulating material over the molding compound;
- and
- attaching a heat sink over an upper surface of the thermally insulating material.
A method of forming a semiconductor package, comprising:
- providing a substrate with an adhesive layer over the substrate;
- attaching a first chip and a second chip to an upper surface of the adhesive layer so as to leave a portion of the adhesive layer exposed;
- forming an insulating barrier layer over the exposed portion of the adhesive layer, over an upper surface of the first chip and along sidewalls of the first chip, and over an upper surface of the second chip and along sidewalls of the second chip;
- forming a thermally conductive layer over the insulating barrier layer;
- planarizing the thermally conductive layer to remove an upper portion of the thermally conductive layer, thereby exposing an upper surface of the insulating barrier layer over the first chip while leaving a planarized lower portion of the thermally conductive layer in place over the second chip;
- and
- forming a molding compound over the exposed upper surface of the insulating barrier layer and over the planarized lower portion of the thermally conductive layer.
Dependencies are inferred from the claim text.