Disposable laser/flash anneal absorber for embedded neuromorphic memory device fabrication
AssigneeInternational Business Machines Corporation
InventorsKam-Leung Lee, Deborah A. Neumayer, Son Nguyen, Martin M. Frank, Vijay Narayanan
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Abstract
A conformal disposable absorber is disclosed which is capable of providing efficient heat transfer to an embedded memory device during a localized absorber anneal, without adversary impacting the back-end-of-the-line (BEOL) structure. The disposable absorber is composed of an amorphous carbonitride material that can be designed to have a low reflection coefficient for laser/flash illumination, and a high extinction coefficient for efficient laser/flash illumination absorption. The disposable absorber is formed at a temperature of 400° C. or less.
Claims16
A method of forming a structure, the method comprising:
- providing a lower interconnect level including at least one first electrically conductive structure embedded in a memory device area of a first interconnect dielectric material layer;
- forming a memory device above the at least one first electrically conductive structure;
- forming a conformal disposable absorber composed of an amorphous carbonitride material surrounding at least an upper portion of the memory device;
- performing an anneal to predominately heat the disposable absorber locally and to activate the memory device;
- removing the disposable absorber;
- and
- forming an upper interconnect level above the lower interconnect level and the memory device.
A method of forming a structure, the method comprising:
- providing a lower interconnect level including at least one first electrically conductive structure embedded in a first interconnect dielectric material layer;
- forming a metal-insulator-metal capacitor above the at least one first electrically conductive structure;
- forming a conformal disposable absorber composed of an amorphous carbonitride material surrounding at least an upper portion of the metal-insulator-metal capacitor;
- performing an anneal to predominately heat the disposable absorber locally and to activate the memory device;
- removing the disposable absorber;
- and
- forming an upper interconnect level above the lower interconnect level and the metal-insulator-metal capacitor.
Dependencies are inferred from the claim text.