Method of cyclic plasma etching of organic film using sulfur-based chemistry
AssigneeTokyo Electron Limited
InventorsVinayak Rastogi, Alok Ranjan
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Abstract
A method of etching is described. The method includes providing a substrate having a first material containing organic material and a second material that is different from the first material, forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas, and exposing the first material on the substrate to the first chemical mixture. Thereafter, the method includes forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element, and exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material.
Claims20
A method of etching, comprising:
- providing a substrate having a first material containing organic material and a second material that is different from the first material;
- forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas;
- exposing the first material on the substrate to the first chemical mixture to change a portion of the first material into a modified first material sub-layer;
- thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element, wherein the second process gas is different from the first process gas;
- and
- exposing the first material including the modified first material sub-layer to the second chemical mixture to selectively etch the modified first material sub-layer relative to the second material.
A method of etching, comprising:
- providing a substrate having a first material containing organic material and a second material that is different from the first material;
- forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas;
- exposing the first material on the substrate to the first chemical mixture;
- thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element;
- and
- exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material,
- wherein the first process gas consists of Ar.
A method of etching, comprising:
- providing a substrate having a first material containing organic material and a second material that is different from the first material;
- forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas;
- exposing the first material on the substrate to the first chemical mixture;
- thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element;
- and
- exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material,
- wherein the second process gas consists of O2, Ar, and a gas selected from the group consisting of SO2 and COS.
A method of etching, comprising:
- providing a substrate having a first material containing organic material and a second material that is different from the first material;
- forming a first chemical mixture by plasma-excitation of a first process gas containing an inert gas;
- exposing the first material on the substrate to the first chemical mixture;
- modifying exposed surfaces of the first material to a finite depth to form a modified sub-layer in the first material during the exposing to the first chemical mixture;
- thereafter, forming a second chemical mixture by plasma-excitation of a second process gas containing S and O, and optionally a noble element;
- exposing the first material on the substrate to the second plasma-excited process gas to selectively etch the first material relative to the second material;
- etching the modified sub-layer in the first material during the exposing to the second chemical mixture;
- forming a protection layer over the second material during the exposing to the second chemical mixture;
- and
- removing the protection layer over the second material during exposing to the first chemical mixture.
Dependencies are inferred from the claim text.