Self-aligned build-up of topographic features
AssigneeIntel Corporation
InventorsLeonard P. Guler, Nick Lindert
Life of this patent
Estimating the term…
Abstract
Methods and architectures for self-aligned build-up of patterned features. An initial patterned feature aspect ratio may be maintained or increased, for example to mitigate erosion of the feature during one or more subtractive device fabrication processes. A patterned feature height may be increased without altering an effective spacing between adjacent features that may be further relied upon, for example to further pattern an underlying material. A patterned feature may be conformally capped with a material, such as a metal or dielectric, in a self-aligned manner, for example to form a functional device layer on an initial pattern having a suitable space width-to-line height aspect ratio without the use of a masked etch to define the cap.
Claims20
A nanofabrication method, comprising:
- patterning a pair of features having sidewalls that define a space therebetween;
- depositing a first material layer over a top surface of the features and over the sidewalls;
- depositing a second material layer over the first material layer, wherein deposition of the second material is insufficiently conformal to form the second material layer over all portions of the first material layer adjacent to the sidewalls;
- and
- exposing at least a portion of the sidewalls by removing regions of the first material layer unprotected by the second material layer while retaining the first material layer over the top surface of the features.
A method of fabricating a transistor, comprising:
- patterning a pair of features to have adjacent sidewalls defining a space within which a semiconductor fin is exposed;
- depositing a first material layer over a top surface of the features and over the adjacent sidewalls;
- depositing a second material layer over the first material layer, wherein the adjacent sidewalls are of sufficient height to shadow at least a portion of the space from deposition of the second material;
- removing regions of the first material layer unprotected by the second material layer while retaining the first material layer over at least the top surface;
- and
- transferring the space by etching into the fin in alignment with the adjacent sidewalls, the features protected from at least a portion of the etching by at least the first material layer.
A semiconductor device, comprising:
- a plurality of recesses in a substrate material forming a grating pattern having first line and space widths;
- and
- a plurality of topographic features over the substrate material, the topographic features further comprising:
- a base material having the grating pattern with the first line and space widths;
- and
- a cap material over the base material and wrapping around a top portion of the base material to define a second line width, larger than the first line width, and a second space width, smaller than the first space width.
Dependencies are inferred from the claim text.