Method and apparatus for non line-of-sight doping
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsChristopher R. Hatem, Piero Sferlazzo, Roger Fish, Dale K. Stone
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Abstract
A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.
Claims14
A method of doping a substrate, comprising:
- providing a substrate in a process chamber, the substrate comprising a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure, wherein the substrate is maintained at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer;
- rapidly cooling the substrate to a second temperature, less than the first temperature;
- and
- heating the substrate from the second temperature to a third temperature, greater than the first temperature.
A method of doping a substrate, comprising:
- providing a substrate in a process chamber, the substrate comprising a semiconductor structure;
- providing a partial pressure of a condensing dopant species in the process chamber;
- heating the substrate to a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the condensing dopant species;
- rapidly cooling the substrate to a second temperature, less than the first temperature;
- maintaining the substrate at the second temperature for a second interval;
- and
- heating the substrate from the second temperature to a third temperature, greater than the first temperature, and maintaining the substrate at the third temperature for a third interval.
Dependencies are inferred from the claim text.