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US 10,541,132 B2Granted
Forming semiconductor structures with two-dimensional materials
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsShih-Yen Lin, Hsuan-An Chen, Si-Chen Lee
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Abstract
The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.
Claims18
A method, comprising:
- forming a first layer of a first two-dimensional material over a substrate, the first two-dimensional material of the first layer having a semiconductor property;
- and
- forming a second layer of a second two-dimensional material of antimonene over the first layer of the first two-dimensional material, the second two-dimensional material being different from the first two-dimensional material;
- wherein the forming the second layer of antimonene includes:
- growing a layer of antimony over the first layer of the first two-dimensional material;
- and
- forming the second layer of antimonene by annealing the layer of antimony with an annealing temperature ranging from about 200° C. to about 400° C.
4 more elements
A method, comprising:
- forming a first layer of a first two-dimensional material over a substrate, the first layer of the first two-dimensional material having a semiconductor property;
- defining an active area by patterning the first layer of the first two-dimensional material;
- and
- forming a source/drain region including a second layer of a second two-dimensional material over the active area of the first layer of the first two-dimensional material, the second layer of the second two-dimensional material having a semimetal property.
1 more element
A method, comprising:
- forming a channel region over a substrate, the channel region including a first two-dimensional material of antimonene having a semiconductor property;
- forming a source/drain structure at least partially over the channel region, the source drain structure including a second two-dimensional material having a semimetal property;
- and
- forming a gate structure over the channel region, the gate structure including a gate dielectric and a gate electrode over the gate dielectric;
- wherein the forming the channel region includes:
- depositing a layer of antimony over a layer of a third two-dimensional material over the substrate, and
- forming the antimonene of the channel region by annealing the layer of antimony with an annealing temperature ranging from about 200° C. to about 400° C.
4 more elements
Dependencies are inferred from the claim text.