Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices

A method of forming a low-dielectric constant material layer, the method comprising performing a plurality of first deposition cycles, each performance of the first deposition cycle comprising ordered operations of:

• supplying a silicon source onto a substrate;
• supplying hydrogen onto the substrate directly after the supplying of the silicon source;
• and
• supplying an additional component source onto the substrate directly after the supplying of the hydrogen, and
• the method further comprising performing a plurality of second deposition cycles performed prior to the plurality of first deposition cycles, each performance of the second deposition cycles comprising operations of:
• supplying the silicon source onto the substrate, and supplying the additional component source onto the substrate,
• wherein the plurality of second deposition cycles are devoid of supplying hydrogen onto the substrate,
• wherein the supplying of the additional component source comprises supplying a carbon source, and
• wherein the method comprises:
• a first phase comprising forming a first portion of the low-dielectric constant material layer having a first thickness;
• a second phase comprising forming a second portion of the low-dielectric constant material layer having a second thickness, wherein the second phase is after the first phase;
• and
• a third phase comprising forming a third portion of the low-dielectric constant material layer having a third thickness, wherein the third phase is after the second phase,
• wherein each of the first phase, second phase, and third phase comprises performing the plurality of first deposition cycles and/or the plurality of second deposition cycles, and wherein the first deposition cycle is performed only in the first phase and the third phase and the first deposition cycle is not performed in the second phase.

A method of forming a SiOCN material layer, the method comprising:

• performing a plurality of first deposition cycles, each performance of the first deposition cycle comprising separately supplying a silicon source onto a substrate directly followed by supplying hydrogen onto the substrate, and
• performing a plurality of second deposition cycles before the plurality of first deposition cycles,
• wherein each performance of the first deposition cycle comprises separately supplying the silicon source, the hydrogen, and a carbon source onto the substrate,
• wherein each performance of the second deposition cycle comprises supplying the silicon source onto the substrate and does not include supplying the hydrogen onto the substrate, thereby forming the SiOCN material layer, and
• wherein the method comprises:
• a first phase comprising forming a first portion of the SiOCN material layer having a first thickness;
• a second phase comprising forming a second portion of the SiOCN material layer having a second thickness, wherein the second phase is after the first phase;
• and
• a third phase comprising forming a third portion of the SiOCN material layer having a third thickness, wherein the third phase is after the second phase,
• wherein each of the first phase, second phase, and third phase comprises performing the plurality of first deposition cycles and/or the plurality of second deposition cycles, and wherein the first deposition cycle is performed only in the first phase and the third phase and the first deposition cycle is not performed in the second phase.