Systems and methods for tilting a wafer for achieving deposition uniformity

A processing chamber used for depositing films on substrates using plasma, comprising:

• a spindle disposed in the processing chamber;
• a pedestal disposed in the processing chamber, such that a side of the pedestal is adjacent to the spindle, the pedestal including a top surface for supporting a substrate when present, wherein the pedestal has a first annular surface and a second annular surface, wherein the first annular surface is a level below and peripheral to the top surface, wherein the second annular surface is a level below and peripheral to the first annular surface;
• a plurality of minimum contact angle (MCA) supports fitted into a plurality of slots that are partially formed into the top surface of the pedestal for supporting the substrate when present, wherein the plurality of MCA supports include a first set of MCA supports that are positioned at vertices of a first triangular region on the top surface of the pedestal and a second set of MCA supports that are positioned at vertices of a second triangular region on the top surface of the pedestal, wherein the second triangular region is encompassed within the first triangular region, wherein one of the MCA supports of the first set is positioned closer to the spindle than other ones of the MCA supports of the first set, and the one of the MCA supports of the first set has a greater height compared to the other ones of the MCA supports of the first set, wherein the one of the MCA supports of the first set is located at one of the vertices of the first triangular region;
• and
• a plurality of ring supports located along a periphery of the pedestal, wherein one of the plurality of ring supports is positioned closer to the spindle than other ones of the plurality of ring supports, and the one of the plurality of ring supports being positioned at an elevated position relative to the other ones of the plurality of ring supports,
• wherein the greater height of the one of the MCA supports of the first set and the elevated position of the one of the plurality of ring supports are configured to raise a side of the substrate when present at an angle over the top surface of the pedestal, wherein the side of the substrate that is raised is adjacent to the spindle,
• wherein the plurality of ring supports are disposed around the plurality of MCA supports and are disposed on top of the second annular surface of the pedestal.