Ternary content addressable memory wiring arrangement

A semiconductor storage device comprising:

• a ternary content addressable memory (TCAM) cell array comprising a first TCAM cell and a second TCAM cell;
• a first word line;
• a second word line;
• a first match line;
• a second match line;
• and
• a pair of search lines,
• wherein the first TCAM cell is coupled to the first word line, the second word line, and the first match line,
• wherein the second TCAM cell is coupled to the first word line, the second word line, and the second match line,
• wherein the first TCAM cell and the second TCAM cell are arranged adjacent to each other in a first direction in a planar view,
• wherein the first TCAM cell and the second TCAM cell are coupled to a first search line of the pair of the search lines,
• wherein the first TCAM cell and the second TCAM cell are coupled to a second search line of the pair of the search lines,
• wherein the pair of search lines is arranged between the first TCAM cell and the second TCAM cell,
• wherein the first word line and the second word line are formed using wirings of a first wiring layer, and the first word line and the second word line extend in the first direction such that the first TCAM cell and the second TCAM cell overlap the first word line and the second word line in the planar view,
• wherein the first match line and the second match line are formed using wirings of a second wiring layer provided adjacent to the first wiring layer, and the first match line and the second match line extend in the first direction such that the first TCAM cell and the second TCAM cell overlap the first match line and second match line in the planar view,
• wherein the first word line and the second word line are in parallel with each other, and the first word line and the second word line are disposed between two first wirings to which a first reference potential is supplied,
• wherein the first wirings are formed using wirings of the first wiring layer,
• wherein the first word line and the second word line are disposed between the two first wirings over all areas where the first TCAM cell and the second TCAM cell overlap the first word line and the second word line in the planar view,
• wherein the first match line and the second match line are in parallel with each other, and the first match line and the second match line are disposed between two second wirings to which the first reference potential is supplied,
• wherein the second wirings are formed using wirings of the second wiring layer, and
• wherein the first match line and the second match line are disposed between the two second wirings over all areas where the first TCAM cell and the second TCAM cell overlap the first match line and second match line in the planar view.