Virtual ground sensing circuitry and related devices, systems, and methods for crosspoint ferroelectric memory

An electrical system, comprising:

• at least one memory cell;
• and
• control circuitry operably coupled to the at least one memory cell, the control circuitry comprising:
• an operational amplifier comprising a non-inverting input, an inverting input, and an amplifier output;
• a follower circuit comprising an n-MOS transistor and a p-MOS transistor, an input of the follower circuit comprising a gate of the n-MOS transistor operably coupled to a gate of the p-MOS transistor, and an output of the follower circuit comprising a source of the n-MOS transistor operably coupled to a source of the p-MOS transistor, the output of the follower circuit operably coupled to the inverting input of the operational amplifier;
• a comparator configured to compare a sense node voltage at a drain of one of the n-MOS transistor and the p-MOS transistor to a reference voltage potential;
• and
• a feedback circuit operably coupling the output of the comparator to the inverting input of the operational amplifier and to a conductive line.