Layout design system and semiconductor device fabricated using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoung Kuk Chae, Hoi Jin Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor device is provided. A semiconductor device includes a filler cell including first and second insulating structures, the first and second insulating structures extending in a first direction, the filler cell being defined by first cell boundaries; and a neighboring cell including a third insulating structure, the third insulating structure extending in the first direction, the neighboring cell being adjacent to the filler cell in the first direction and defined by second cell boundaries, wherein the first and second insulating structures are spaced apart from one another in a second direction, is the second direction being perpendicular to the first direction.
Claims19
A semiconductor device, comprising:
- a filler cell including first and second insulating structures, the first and second insulating structures extending in a first direction, the filler cell being defined by first cell boundaries;
- and
- a standard cell neighboring the filler cell, the standard cell including a third insulating structure, the third insulating structure extending in the first direction, the neighboring standard cell being adjacent to the filler cell in the first direction and defined by second cell boundaries,
- wherein the first and second insulating structures are spaced apart from one another in a second direction, the second direction being perpendicular to the first direction,
- the first insulating structure is connected to the third insulating structure, and
- the second insulating structure is not connected to the third insulating structure.
A semiconductor device, comprising:
- a first filler cell including first and second insulating structures, the first and second insulating structures extending in a first direction, the first filler cell being defined by first cell boundaries;
- and
- a first standard cell neighboring the first filler cell, the first standard cell including a third insulating structure, the third insulating structure extending in the first direction, the first standard cell being adjacent to the first filler cell in the first direction and defined by second cell boundaries,
- wherein the first and second insulating structures are spaced apart from each other in a second direction that is perpendicular to the first direction,
- wherein the first insulating structure is connected to the third insulating structure and the second insulating structure is not connected to the third insulating structure,
- wherein the first and second insulating structures do not overlap with each other in the second direction.
A method of fabricating a semiconductor device comprising:
- executing machine readable instructions on a processor to generate at least one filler cell for placement between a first standard cell and a second standard cell for a layout of the semiconductor device, the at least one filler cell including first and second insulating structures extending in a first direction, the first insulating structure inline with a third insulating structure in the first standard cell, the second insulating structure not inline with an insulating structure in the second standard cell, the first and second insulating structures being spaced apart from one another in a second direction, the second direction being perpendicular to the first direction;
- and
- fabricating the semiconductor device according to the layout.
Dependencies are inferred from the claim text.