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US 10,540,099 B2Granted
System for managing the wear of an electronic memory
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsMichel Harrand, Elisa Vianello
Life of this patent
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Abstract
A system including: a first memory including several portions each of several pages, this memory including first and second ports that enable simultaneous access to two pages of distinct portions of the memory; and a control circuit suitable for implementing, via the second port, a method for balancing the wear of the memory, including movements of data within the memory, while authorizing simultaneous user access to the memory contents via the first port.
Claims18
A system comprising:
- a first resistive memory comprising a plurality of segments having a plurality of pages each, the first resistive memory comprising first and second memory ports configured to simultaneously access two pages of the first resistive memory that belong to different segments of the plurality of segments, each of said different segments comprising a single port of access to the pages in the respective segment, wherein the single ports can be connected to one or the other of the first and second memory ports of the first resistive memory via multiplexing circuits;
- and
- a control circuit configured to implement, via the second memory port, a wear management method of managing wear of the first resistive memory, the wear management method comprising read and/or write accesses to data stored in the first resistive memory, while simultaneously allowing user accesses to content of the first resistive memory via the first memory port, the control circuit configured to access a particular segment of the first resistive memory for the wear management method only when no user access is being performed on the particular segment of the first resistive memory,
- wherein the control circuit is configured to only access the particular segment of the first resistive memory for the wear management method simultaneously to user access of another segment of the first resistive memory.
1 more element
Dependencies are inferred from the claim text.