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US 10,539,871 B2Granted
I-line negative type photoresist composition having excellent etching resistance
AssigneeYoung Chang Chemical Co., Ltd
InventorsSeung Hun Lee, Seung Hyun Lee, Sang Woong Yoon, Young Cheol Choi
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Abstract
This invention relates to an I-line negative photoresist composition having excellent etching resistance, which can exhibit superior etching resistance compared to conventional I-line negative photoresists and is thus suitable for use in semiconductor processing.
Claims8
An I-line negative photoresist composition, comprising, based on a total weight of the composition:
- 5 to 50 wt % of a polymer resin;
- 0.1 to 10 wt % of at least one selected from the group consisting of compounds represented by Chemical Formulas 1 to 5 below:
- in Chemical Formulas 1 to 5, Rs are identical to or different from each other, and are independently any one selected from the group consisting of acryloyl, allyl, 3-ethoxyacryloyl, methylacryl, trans-3-(benzoyl)acryl, and 3-(2-furyl)acryl;
- 1 to 10 wt % of a crosslinking agent;
- 0.1 to 10 wt % of a photoacid generator;
- 0.01 to 5 wt % of an acid diffusion inhibitor;
- and
- a remainder of a solvent.
5 more elements
Dependencies are inferred from the claim text.