Film and methods of forming same
AssigneeExogenesis Corporation
InventorsSean R. Kirkpatrick, Son T. Chau
Life of this patent
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Abstract
A film and method of forming a film provides an unmodified starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, and a modified surface layer of thickness T2 which is less than T1, formed in at least a portion of the second surface, wherein a portion of the modified surface layer is not supported by unmodified starting material removed from the first surface opposite the modified surface layer.
Claims14
A method of forming a film comprising the steps of:
- providing a starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial, thickness, T1, thicker than a desired final film thickness, T2;
- providing a support layer having an opening;
- supporting the starting layer on the support layer, suspending the first surface across the opening;
- irradiating a portion of the second surface over the opening with a non-photonic, accelerated energetic particle beam to modify the irradiated surface portion to a depth of thickness T2;
- and
- treating the first surface of the irradiated starting layer with a solvent to remove unmodified starting material and to leave a film of thickness T2 over at least a portion of the opening.
A method of forming a film comprising the steps of:
- providing a starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, thicker than a desired final film thickness, T2;
- providing a support layer having an opening;
- supporting the starting layer on the support layer, suspending the first surface across the opening;
- irradiating a portion of the second surface over the opening with a non-photonic, accelerated energetic particle beam to modify the irradiated surface portion to a depth of thickness T2;
- treating the first surface of the irradiated starting layer with a solvent to remove unmodified starting material and to leave a film of thickness T2 over at least a portion of the opening;
- and
- wherein the thickness, T2, is in the range of from 20 inn to 500 nm.
A method of forming a film comprising the steps of:
- providing a starting layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, thicker than a desired final film thickness, T2;
- providing a support layer having an opening;
- supporting the starting layer on the support layer, suspending the first surface across the opening;
- irradiating a portion of the second surface over the opening with a non-photonic, accelerated energetic particle beam to modify the irradiated surface portion to a depth of thickness T2;
- treating the first surface of the irradiated starting layer with a solvent to remove unmodified starting material and to leave a film or thickness T2 over at least a portion of the opening;
- and
- wherein the energetic particle beam is a dissociated neutral beam formed horn an accelerated gas-cluster ion beam and the thickness, T2, is less than 5 nm.
A method of forming a film comprising the steps of:
- providing a starting, layer of a starting material, the starting layer having opposed first and second surfaces and an initial thickness, T1, thicker than a desired final film thickness, T2;
- irradiating at least a portion of the second surface with a non-photonic accelerated energetic particle beam to modify the irradiated surface portion to a depth of thickness T2;
- and
- treating the first surface of the irradiated starting layer with a solvent to remove unmodified starting material and to leave a film of thickness T2 over at least a portion of the starting layer.
Dependencies are inferred from the claim text.