In-plane retardation switching device
AssigneeI-Core Technology, LLC
InventorAkihiro Mochizuki
Life of this patent
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Abstract
An in-plane retardation switching device includes a first substrate, a second substrate, a non-chiral smectic C phase liquid crystal material disposed between the first substrate and the second substrate. The liquid crystal material is of a bulk state. The liquid crystal material has a phase transition sequence of a smectic C phase, a smectic A phase, a nematic phase and an isotropic phase in this order. The liquid crystal material does not have spontaneous polarization and is configured to be driven by quadra-pole momentum of the liquid crystal material.
Claims7
An in-plane retardation switching device comprising:
- a first substrate comprising a first electrode;
- a second substrate comprising a second electrode;
- and
- a liquid crystal layer contacting the first substrate and the second substrate and filling space between the first substrate and the second substrate, the liquid crystal layer including a non-chiral smectic C phase liquid crystal material disposed between the first substrate and the second substrate,
- wherein the liquid crystal material is of a bulk state,
- a liquid crystal molecular axis of the liquid crystal material stays within a plane parallel to the first and second substrates during the in-plane retardation switching,
- no chiral liquid crystal material is disposed between the first electrode on the first substrate and the second electrode on the second substrate, and
- the liquid crystal layer is homogeneously stacked between the first substrate and the second substrate.
An in-plane retardation switching device comprising:
- a first substrate comprising a first electrode;
- a second substrate comprising a second electrode;
- and
- a liquid crystal layer contacting the first substrate and the second substrate and filling space between the first substrate and the second substrate, the liquid crystal layer including a liquid crystal material disposed between the first substrate and the second substrate,
- wherein the liquid crystal material has a phase transition sequence of a smectic C phase, a smectic A phase, a nematic phase and an isotropic phase in this order,
- a liquid crystal molecular axis of the liquid crystal material stays within a plane parallel to the first and second substrates during the in-plane retardation switching,
- no chiral liquid crystal material is disposed between the first electrode on the first substrate and the second electrode on the second substrate, and
- the liquid crystal layer is homogeneously stacked between the first substrate and the second substrate.
An in-plane retardation switching device comprising:
- a first substrate comprising a first electrode;
- a second substrate comprising a second electrode;
- and
- a liquid crystal layer contacting the first substrate and the second substrate and filling space between the first substrate and the second substrate, the liquid crystal layer including a non-chiral smectic C phase liquid crystal material disposed between the first substrate and the second substrate,
- wherein the liquid crystal material does not have spontaneous polarization and is configured to be driven by quadrupole moment of the liquid crystal material,
- a liquid crystal molecular axis of the liquid crystal material stays within a plane parallel to the first and second substrates during the in-plane retardation switching,
- no chiral liquid crystal material is disposed between the first electrode on the first substrate and the second electrode on the second substrate, and
- the liquid crystal layer is homogeneously stacked between the first substrate and the second substrate.
Dependencies are inferred from the claim text.