Display device
AssigneeJapan Display Inc.
InventorsYohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
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Abstract
According to one embodiment, a display device includes an insulating substrate, a thin-film transistor including a semiconductor layer formed on a layer above the insulating substrate, a gate electrode which at least partly overlaps the semiconductor layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer, and a light shielding layer formed between the thin-film transistor and the insulating substrate to at least partly overlap the semiconductor layer, the light shielding layer electrically connected to the gate electrode.
Claims5
A semiconductor device comprising:
- an insulating substrate;
- a semiconductor layer above the insulating substrate;
- a first electrode layer and a second electrode layer which are electrically connected to the semiconductor layer;
- a first metal layer opposed to a first surface of the semiconductor layer;
- a first insulating layer between the first metal layer and the semiconductor layer;
- a second metal layer opposed to a second surface of the semiconductor layer;
- a second insulating layer between the second metal layer and the semiconductor layer;
- a third metal layer electrically connecting the first metal layer and the second metal layer via one contact hole penetrating the first insulating film and the second insulating film, wherein
- the first electrode layer, the second electrode layer, and the third metal layer are all formed of the same material, and
- the third metal layer directly contacts a top surface and a side surface of the second metal layer and a top surface of the first metal layer.
Dependencies are inferred from the claim text.