Stacked nanofluidics structure
AssigneeInternational Business Machines Corporation
InventorKangguo Cheng
Life of this patent
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Abstract
Methods and devices for a stacked nanofluidic sensor are described. The stacked nanofluidic sensor and methods for forming a nanosheet stack of at least two alternating layers of a first nanosheet material and a second nanosheet material on a substrate. Additionally, a gate structure is formed on the nanosheet stack. Further, nanofluidic channels are formed within the gate structure, including removing each layer of the first nanosheet material within the gate structure to form a channel configured to receive a nanofluidic sample.
Claims16
A method for forming a stacked nanofluidic sensor, comprising:
- forming a nanosheet stack of at least two alternating layers of a first nanosheet material and a second nanosheet material on a substrate;
- forming a gate structure on the nanosheet stack;
- and
- forming nanofluidic channels within the gate structure by removing each layer of the first nanosheet material within the gate structure to form a channel configured to receive a nanofluidic sample.
A method for forming a stacked nanofluidic sensor device, comprising:
- concurrently forming nanosheet stacks of at least two alternating layers of a first nanosheet material and a second nanosheet material in each of at least a first region and a second region on a substrate;
- concurrently forming a dummy gate over and around the nanosheet stack in each of at least the first region and the second region;
- concurrently forming gate structures in each of at least the first region and the second region by a gate replacement process, including replacing each layer of the first nanosheet material in each of at least the first region and the second region with a gate conductor;
- forming a transistor in the first region including the gate structure in the first region;
- and
- forming a nanofluidic sensor in the second region by removing the gate conductor from within the gate structure in the second region to form channels within the gate structure configured to receive a nanofluidic sample.
Dependencies are inferred from the claim text.