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US 10,538,862 B2Granted
Crystal laminate structure
AssigneesTamura Corporation, National University Corporation Tokyo University of Agriculture and Technology
InventorsKen Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Abstract
A crystal laminate structure includes a Ga2O3-based substrate, and a β-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The β-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.
Claims14
A crystal laminate structure, comprising:
- a Ga2O3-based substrate;
- and
- a β-Ga2O3-based single crystal epitaxial film formed by HVPE method on a principal surface of the Ga2O3-based substrate,
- wherein the β-Ga2O3-based single crystal epitaxial film comprises Cl as an unintentional impurity resulting from the HVPE method using Cl-containing gas,
- wherein the β-Ga2O3-based single crystal epitaxial film comprises Si as a dopant doped in parallel with the crystal epitaxial growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3, and
- wherein the concentration of the Si is based on a value of P0SiCl4/(P0GaCl+P0SiCl4), when P0SiCl4 and P0GaCl are a supplied partial pressure of SiCl4 gas that is a source gas of Si and a supplied partial pressure of GaCl gas that is a source gas of Ga, respectively.
3 more elements
Dependencies are inferred from the claim text.