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US 10,538,846 B2Granted
Etching solution composition for tungsten layer, method for preparing electronic device using the same and electronic device
AssigneeDongwoo Fine-Chem Co., Ltd.
InventorsSeong-Min Kim, Yong-Jun Cho, Kyong-Ho Lee
Life of this patent
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Abstract
The present disclosure relates to an etching solution composition for a tungsten layer including N-methylmorpholine N-oxide and water, which is effective in selectively etching only a tungsten-based metal without etching a titanium nitride-based metal or a titanium aluminum carbide layer.
Claims8
A method for preparing an electronic device comprising a process of etching a tungsten metal using an etching solution composition for a tungsten layer comprising N-methylmorpholine N-oxide;
- and water,
- wherein the electronic device comprises a tungsten metal, and comprises at least one selected from a titanium nitride metal or a titanium aluminum carbide metal,
- wherein the etching solution composition etches the titanium nitride metal or the titanium aluminum carbide metal at an etch rate of less than 1 Å/min,
- wherein the etching solution composition for a tungsten layer comprises:
- the N-methylmorpholine N-oxide in 25% by weight to 50% by weight, with respect to a total weight of the etching solution composition for a tungsten layer.
2 more elements
Dependencies are inferred from the claim text.