Biosensor and detection device
AssigneeTianma Microelectronics Co., Ltd.
InventorsKazushige Takechi, Shinnosuke Iwamatsu, Yutaka Abe, Toru Yahagi, Shunsuke Konno, Mutsuto Katoh
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Abstract
A TFT biosensor includes a gate electrode (silicon substrate), a reference electrode, and enzyme that is fixed to an insulating substrate spatially separated from the gate electrode and the reference electrode. A pH variation in the vicinity of an ion-sensitive insulating film is induced by a reaction between the enzyme and a sensing object material. The TFT biosensor can detect a concentration of the sensing object material with high sensitivity by detecting the pH variation as a threshold voltage shift of characteristics of a gate-source voltage to a source-drain current.
Claims5
A biosensor, comprising:
- a semiconductor active layer;
- a first gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a first gate electrode from each other;
- a second gate insulating film that is provided on a second surface of the semiconductor active layer;
- a second gate electrode that is provided on the second gate insulating film, and extends to a position that is two-dimensionally spaced away from a region overlapping with the semiconductor active layer;
- and
- an enzyme that is fixed to an extension end side of the second gate electrode, and reacts with a material in a solution to modulate a voltage that is applied to the second gate electrode,
- wherein an electrostatic capacity per unit area of the second gate insulating film is greater than an electrostatic capacity per unit area of the first gate insulating film.
A biosensor, comprising:
- a semiconductor active layer;
- a first gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a first gate electrode from each other;
- a second gate insulating film that is provided on a second surface of the semiconductor active layer;
- a second gate electrode that is provided on the second gate insulating film, and extends to a position that is two-dimensionally spaced away from a region overlapping with the semiconductor active layer;
- an ion-sensitive insulating film that is provided on the second gate electrode;
- and
- an enzyme that is fixed onto the ion-sensitive insulating film, and reacts with a material in a solution to allow a potential variation in the ion-sensitive insulating film to occur,
- wherein an electrostatic capacity per unit area of the second gate insulating film is greater than an electrostatic capacity per unit area of the first gate insulating film.
A biosensor, comprising:
- a semiconductor active layer;
- a first gate insulating film that is provided on a first surface of the semiconductor active layer, and insulates the semiconductor active layer and a first gate electrode from each other;
- a second gate insulating film that is provided on a second surface of the semiconductor active layer;
- a second gate electrode that is provided on the second gate insulating film, and extends to a position that is two-dimensionally spaced away from a region overlapping with the semiconductor active layer;
- an ion-sensitive insulating film that is provided on the second gate electrode;
- and
- a plurality of enzymes which are fixed onto the ion-sensitive insulating film, and react with a material in a solution to allow a potential variation in the ion-sensitive insulating film to occur,
- wherein the plurality of enzymes are disposed on the ion-sensitive insulating film with a regular interval or in a random manner in order for a surface of the ion-sensitive insulating film to come into contact with the solution, and
- an electrostatic capacity per unit area of the second gate insulating film is greater than an electrostatic capacity per unit area of the first gate insulating film.
Dependencies are inferred from the claim text.