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US 10,538,718 B2Granted
Cleaning solution and cleaning method for material comprising carbon-incorporated silicon oxide for use in recycling wafer
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsToshiyuki Oie, Kenji Shimada
Life of this patent
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Abstract
It is an object of the present invention to provide a cleaning solution for removing carbon-incorporated silicon oxide (SiOC) from the surface of a wafer in a step of producing a wafer having a material comprising the SiOC, and a cleaning method of using the same. The cleaning solution of the present invention comprises 2% by mass to 30% by mass of a fluorine compound, 0.0001% by mass to 20% by mass of a specific cationic surfactant that is an ammonium salt or an amine, and water, and has a pH value of 0 to 4.
Claims6
A cleaning solution consisting of:
- 2% by mass to 30% by mass of a fluorine compound;
- 0.0001% by mass to 20% by mass of a cationic surfactant that is an ammonium salt or an amine having only one alkyl group containing 10 or more carbon atoms;
- water;
- an acid which is at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, hydrochloric acid, acetic acid, citric acid, formic acid, lactic acid, and oxalic acid;
- and
- optionally at least one selected from the group consisting of an alkali, an oxidant, a metal corrosion inhibitor, a water-soluble organic solvent, a reducing agent, a chelating agent, and an anti-foaming agent,
- wherein the cleaning solution has a pH value of 0 to 4.
4 more elements
Dependencies are inferred from the claim text.