Sputtering target for forming protective film, and laminated wiring film
AssigneeMitsubishi Materials Corporation
InventorsSatoru Mori, Sohei Nonaka
Life of this patent
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Abstract
A sputtering target for forming protective film which is used to form a protective film on one surface or both surfaces of a Cu wiring film contains Ni: 5.0 to 15.0% by mass, Mn: 2.0 to 10.0% by mass, Zn: 30.0 to 50.0% by mass, Al: 0.5 to 7.0% by mass, and a remainder composed of Cu and inevitable impurities. A laminated wiring film is provided with a Cu wiring film and the protective film formed on one surface or both surfaces of the Cu wiring film, and the protective film is formed by the above-described sputtering target for forming protective film.
Claims2
A backing plate-attached sputtering target for forming a protective film, which is used to form a protective film on one or both surfaces of a Cu wiring film,
- the backing plate-attached target comprising a backing plate and a sputtering target that is soldered on the backing plate by using indium,
- the sputtering target consisting of:
- Ni:
- 5.0 to 15.0% by mass,
- Mn:
- 2.0 to 10.0% by mass,
- Zn:
- 30.1% to 50.0% by mass,
- Al:
- 2.0 to 4.5% by mass, and
- the remainder composed of Cu and inevitable impurities,
- wherein the sputtering target is produced by hot rolling and cold rolling an ingot consisting of Ni:
- 5.0 to 15.0% by mass, Mn:
- 2.0 to 10.0% by mass, Zn:
- 30.1% to 50.0% by mass, Al:
- 2.0 to 4.5% by mass, and the remainder composed of Cu and inevitable impurities.
Dependencies are inferred from the claim text.