Magnetic memory physically unclonable functions

A memory device including a physically unclonable function (PUF), comprising:

• a memory array, the memory array including a magnetic tunnel junction (MTJ) cell selected for use as a PUF;
• an address decoder configured to access the MTJ cell in the memory array based on a logical address signal associated with the MTJ cell;
• and
• driver circuitry configured, in response to a logical authentication enable signal, to:
• destabilize the MTJ cell through application of a first current pulse on a digitline of the MTJ cell for a first predetermined period of time to orient the MTJ cell to a hard axis of an energy profile of the MTJ cell;
• release the MTJ cell for a second predetermined period of time to allow the MTJ cell to reach a settling state of the MTJ cell;
• read the settling state of the MTJ cell through application of a second current pulse on a bitline of the MTJ cell;
• and
• provide, over a data bus, a value representative of the settling state as a response of the PUF.

A method of using a magnetic memory cell as a physically unclonable function (PUF), comprising:

• destabilizing the magnetic memory cell through application of a first current pulse on a digitline of the magnetic memory cell for a first predetermined period of time to orient the magnetic memory cell to a hard axis of an energy profile of the magnetic memory cell;
• releasing the magnetic memory cell from the destabilizing for a second predetermined period of time to allow the magnetic memory cell to reach a settling state of the magnetic memory cell;
• reading the settling state of the magnetic memory cell through application of a second current pulse on a bitline of the magnetic memory cell after the releasing;
• and
• providing a value representative of the settling state as a response of the PUF.