Back to results
US 10,529,537 B1Granted
Electron flood lithography
AssigneeFacebook Technologies, LLC
InventorsChristopher Percival, James Small
Life of this patent
Estimating the term…
Abstract
A lithography system includes an electron source, a lens, and a stencil mask. The electron source emits a beam of electrons. The lens converts the emitted beam of electrons into a diffuse beam of parallel electrons. The stencil mask is positioned between the lens and a semiconductor wafer with an electron-sensitive resists. The stencil mask has a pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist of the wafer.
Claims17
A system for lithography comprising:
- an electron source for emitting a beam of electrons;
- a lens for converting the emitted beam of electrons into a diffuse beam of parallel electrons;
- and
- a stencil mask between a semiconductor wafer with an electron-sensitive resist and the lens, the stencil mask having a first pattern to selectively pass portions of the diffuse beam of parallel electrons onto the electron-sensitive resist to form a second pattern on the semiconductor wafer corresponding to the first pattern, the diffuse beam of parallel electrons simultaneously projected onto an area of the stencil mask including the first pattern.
1 more element
A method for patterning a semiconductor wafer comprising:
- positioning a patterned stencil mask over a semiconductor wafer having an electron-sensitive resist on a top of the semiconductor wafer, the patterned stencil mask selectively exposing one or more portions of the top of the semiconductor wafer having the electron-sensitive resist;
- generating a beam of parallel electrons over the patterned stencil mask;
- irradiating the one or more exposed portions of the semiconductor wafer with the beam of parallel electrons responsive to generating the beam of parallel electrons;
- and
- removing at least a portion of the electron-sensitive resist to obtain a patterned semiconductor wafer responsive to irradiating the one or more exposed portions of the semiconductor wafer.
2 more elements
Dependencies are inferred from the claim text.