High efficiency quantum dot LED structure
AssigneeSharp Kabushiki Kaisha
InventorsDavid James Montgomery, Edward Andrew Boardman, James Andrew Robert Palles-Dimmock, Tim Michael Smeeton
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AssigneeSharp Kabushiki Kaisha
InventorsDavid James Montgomery, Edward Andrew Boardman, James Andrew Robert Palles-Dimmock, Tim Michael Smeeton
Estimating the term…
A light-emitting device maximizes optical efficiency when the emissive layer is high refractive index material. Said device includes an emissive layer; a first electrode and a second electrode from which charges are generated; a first charge transport layer that injects charges from the first electrode into the emissive layer; and a second charge transport layer that injects charges from the second electrode into the emissive layer. A Fresnel reflection value at boundaries between the emissive layer and at least one of the first and second charge transport layers is from 5% through 30%, and at least one of the charge transport layers satisfies a half wavelength condition of having a thickness that is equal to within twenty percent of ½ of one wavelength of an integer multiple of ½ of one wavelength in the charge transport layer material within a bandwidth of emission of the emissive layer.
A light-emitting device comprising:
Dependencies are inferred from the claim text.