Semiconductor storage device comprising resistance change film and method of manufacturing the same

A method of manufacturing a semiconductor storage device, comprising:

• forming a plurality of first insulators and a first film between the first insulators on a substrate;
• forming a first interconnect that penetrates the plurality of first insulators and the first film;
• forming a cavity between the first insulators by removing the first film after forming the first interconnect;
• forming a resistance change film on upper and lower faces of the first insulators exposed toward the cavity and on a lateral face of the first interconnect exposed toward the cavity;
• and
• forming a second interconnect in the cavity via the resistance change film,
• wherein the resistance change film is formed so as to include a first metal layer or a first semiconductor layer that includes a first face provided on a first interconnect side and having a convex shape protruding to the first interconnect side and a second face provided on a second interconnect side and having a convex shape protruding to the second interconnect side.