Lithography process with enhanced etch selectivity
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Yu Liu, Ching-Yu Chang, Chin-Hsiang Lin
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Abstract
The present disclosure provides a method for lithography patterning. The method includes coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material; forming a middle layer on the bottom layer, wherein the middle layer has a composition such that its silicon concentration is enhanced to be greater than 42% in weight; coating a photosensitive layer on the middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer to form a patterned photosensitive layer.
Claims20
A method for lithography patterning, comprising:
- coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material;
- forming a middle layer on the bottom layer, wherein the middle layer has a composition such that its silicon concentration is enhanced to be greater than 42% in weight;
- coating a photosensitive layer on the middle layer;
- performing an exposing process to the photosensitive layer;
- and
- developing the photosensitive layer to form a patterned photosensitive layer.
A method for lithography patterning, comprising:
- coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material;
- coating a middle material solution on the bottom layer, wherein the middle material solution includes linear polymer chains and a cross-linking additive mixed in a solvent;
- performing a curing baking process to the middle material solution with a first baking temperature;
- thereafter performing an outgassing baking process to the middle material solution with a second baking temperature greater than the first baking temperature, thereby forming a middle layer with enhanced silicon concentration;
- coating a photosensitive layer on the middle layer;
- performing an exposing process to the photosensitive layer;
- and
- developing the photosensitive layer to form a patterned photosensitive layer.
A method for lithography patterning, comprising:
- coating a bottom layer on a substrate, wherein the bottom layer is made of a carbon-rich material having a phenol group;
- preparing a middle material solution on the bottom layer, wherein the middle material solution includes linear polymer chains, a cross-linker and a cross-linking additive mixed in a solvent, wherein the cross-linker includes a silicon hydroxide, wherein the preparing of the middle material solution includes preheating;
- coating the middle material solution to the bottom layer;
- performing a curing baking process to the middle material solution with a first baking temperature;
- thereafter performing an outgassing baking process to the middle material solution with a second baking temperature greater than the first baking temperature, thereby forming a middle layer with enhanced silicon concentration;
- coating a photosensitive layer on the middle layer;
- and
- performing an exposing process to the photosensitive layer.
Dependencies are inferred from the claim text.