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US 10,520,813 B2Granted
Extreme ultraviolet photoresist with high-efficiency electron transfer
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Han Lai, Chin-Hsiang Lin, Chien-Wei Wang
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Abstract
A method includes forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer, a sensitizer, and a photo-acid generator (PAG), wherein the sensitizer includes a resonance ring that includes nitrogen and at least one double bond. The method further includes performing an exposing process to the photoresist layer. The method further includes developing the photoresist layer, thereby forming a patterned photoresist layer.
Claims19
A method comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer that exhibits a change in solubility in a developer, a sensitizer that emits electrons when exposed to EUV radiation, and a photo-acid generator (PAG), wherein a cation of the PAG has a chemical bond to a sulfur and an additional chemical bond, and wherein the sensitizer includes a material selected from the group consisting of
- and a combination thereof;
- performing an exposing process to the photoresist layer, the exposing process having a dose that is less than 20 mJ/cm2;
- after the exposing process, performing a thermal treatment to the photoresist layer at a temperature from about 120° C. to about 160° C.;
- and
- after the thermal treatment, developing the photoresist layer, thereby forming a patterned photoresist layer.
3 more elements
A method comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes a polymer that becomes more soluble or less soluble in a developer, a sensitizer that emits electrons when exposed to EUV radiation, and a photo-acid generator (PAG), wherein the PAG comprises an absorbing group that includes a structure with a plurality of rings, in which one of the rings is a heterocyclic resonance ring with at least one double bond, wherein a cation of the PAG has a chemical bond to a sulfur and an additional chemical bond;
- performing an exposing process to the photoresist layer, the exposing process having a dose less than 20 mJ/cm2;
- and
- developing the photoresist layer, thereby forming a patterned photoresist layer, wherein the sensitizer includes a material selected from the group consisting of
- and a combination thereof.
2 more elements
A method comprising:
- forming a photoresist layer over a substrate, wherein the photoresist layer includes:
- a polymer that changes solubility in a developer;
- a sensitizer that emits electrons when exposed to EUV radiation and that includes a resonance ring that includes nitrogen and at least one double bond, wherein the sensitizer includes a material selected from the group consisting of
- and a combination thereof;
- and
- a photo-acid generator (PAG), wherein the PAG comprises an absorbing group that includes a structure with a plurality of rings, in which one of the rings is a heterocyclic resonance ring with at least one double bond, wherein a cation of the PAG has a chemical bond to a sulfur and an additional chemical bond;
- performing an extreme ultraviolet (EUV) exposure to the photoresist layer;
- after the EUV exposure, performing a thermal treatment to the photoresist layer at a temperature from about 120° C. to about 160° C.;
- and
- after the thermal treatment, developing the photoresist layer, thereby forming a patterned photoresist layer.
7 more elements
Dependencies are inferred from the claim text.