Process for producing photoresist pattern and photoresist composition
AssigneeSumitomo Chemical Company, Limited
InventorsTatsuro Masuyama, Koji Ichikawa
Life of this patent
Estimating the term…
Loading patent…
AssigneeSumitomo Chemical Company, Limited
InventorsTatsuro Masuyama, Koji Ichikawa
Estimating the term…
A process for producing a photoresist pattern comprising steps (1) to (5); (1) applying a photoresist composition onto a substrate, said photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group; (2) drying the applied composition to form a composition layer; (3) exposing the composition layer; (4) heating the exposed composition layer; and (5) developing the heated composition layer with a developer which comprises butyl acetate, wherein a distance of Hansen solubility parameters between the resin and butyl acetate is from 3.3 to 4.3, the distance is calculated from formula (1): R=(4×(δdR−15.8)2+(δpR−3.7)2+(δhR−6.3)2)1/2 (1) in which δdR represents a dispersion parameter of the resin, δpR represents a polarity parameter of the resin, δhR represents a hydrogen bonding parameter of the resin, and R represents the distance, and a film retention ratio of the photoresist pattern relative to the composition layer is adjusted to 65% or more.
A process for producing a photoresist pattern comprising steps (1) to (5);
A photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-labile group;
Dependencies are inferred from the claim text.