Back to results
US 10,520,467 B2Granted
CMOS compatible BioFET
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
Claims20
A BioFET device, comprising:
- a FET device on a semiconductor substrate, wherein the FET device includes a gate structure formed on a first surface of the semiconductor substrate and a channel region within the semiconductor substrate, wherein the channel region interposes a source region and a drain region in the semiconductor substrate, and wherein the source and drain regions are disposed within a well region in the semiconductor substrate;
- an isolation layer having a top surface, an opposite bottom surface, and an opening and disposed on a second surface of the semiconductor substrate, the second surface of the semiconductor substrate being parallel to and opposing the first surface of the semiconductor substrate, wherein the opening is located over the channel region of the FET device, the channel region including a portion of the second surface of the semiconductor substrate, and wherein the top surface of the isolation layer is a greater distance from the second surface of the semiconductor substrate compared to the bottom surface of the isolation layer;
- an inorganic layer disposed on the channel region of the second surface of the semiconductor substrate in the opening, wherein the inorganic layer has a top surface and an opposite bottom surface, wherein the top surface of the inorganic layer is a greater distance from the second surface of the semiconductor substrate compared to the bottom surface of the inorganic layer, and wherein the top surface of the isolation layer is a greater distance from the second surface of the semiconductor substrate compared to the top surface of the inorganic layer;
- an insulating layer disposed on the isolation layer;
- a fluidic channel disposed on the insulating layer and the isolation layer, wherein the inorganic layer is disposed within a cavity of the fluidic channel;
- and
- a plurality of biomolecules bound to the inorganic layer.
4 more elements
A BioFET device, comprising:
- a FET device on a semiconductor substrate, wherein the FET device includes a gate structure formed on a first surface of the semiconductor substrate and a channel region within the semiconductor substrate, wherein the channel region interposes a source region and a drain region in the semiconductor substrate;
- an isolation layer having an opening and disposed on a second surface of the semiconductor substrate, the second surface of the semiconductor substrate being parallel to and opposing the first surface of the semiconductor substrate, wherein the opening is located over the channel region of the FET device, the channel region including a portion of the second surface of the semiconductor substrate;
- an interface material on the channel region of the second surface of the semiconductor substrate in the opening;
- a multi-layer interconnect (MLI) structure on the first surface of the semiconductor substrate, wherein the MLI structure includes at least a first conductive layer and a second conductive layer interposed by an inter-layer dielectric (ILD) layer;
- a trench extending through the isolation layer and through the semiconductor substrate to the first conductive layer of the MLI structure;
- an interconnect layer disposed in the trench and making conductive contact with the first conductive layer of the MLI structure;
- an insulating layer disposed on the interconnect layer in the trench and on the isolation layer, wherein at least a first portion of the interconnect layer is interposed between the isolation layer and the insulating layer;
- a fluidic channel disposed on the insulating layer and the interconnect layer;
- and
- a plurality of biomolecules bound to the interface material.
7 more elements
A BioFET device, comprising:
- a FET device on a semiconductor substrate, wherein the FET device includes a gate structure formed on a first surface of the semiconductor substrate and a channel region within the semiconductor substrate, wherein the channel region interposes a source region and a drain region in the semiconductor substrate, and wherein the source and drain regions are disposed within a well region in the semiconductor substrate;
- an isolation layer having an opening and disposed on a second surface of the semiconductor substrate, the second surface of the semiconductor substrate being parallel to and opposing the first surface of the semiconductor substrate, wherein the opening is located over the channel region of the FET device, the channel region including a portion of the second surface of the semiconductor substrate;
- an inorganic layer disposed on the channel region of the second surface of the semiconductor substrate in the opening, the inorganic layer having a lower thickness than the isolation layer;
- a multi-layer interconnect (MLI) structure on the first surface of the semiconductor substrate, wherein the MLI structure includes at least a first conductive layer and a second conductive layer interposed by an inter-layer dielectric (ILD) layer;
- a carrier substrate coupled to the first conductive layer of the MLI structure;
- an insulating layer disposed on the isolation layer;
- a fluidic channel disposed on the insulating layer and the isolation layer;
- and
- a plurality of biomolecules bound to the interface material.
6 more elements
Dependencies are inferred from the claim text.